Infineon BSZ040N06LS5ATMA1 60V OptiMOS™ Power MOSFET: Engineered for High-Efficiency Power Conversion
In the rapidly advancing world of electronics, the demand for higher efficiency, greater power density, and improved thermal performance in power conversion systems is relentless. Addressing these challenges head-on, Infineon Technologies introduces the BSZ040N06LS5ATMA1, a 60V N-channel OptiMOS™ power MOSFET that sets a new benchmark for performance in applications ranging from DC-DC converters and motor drives to synchronous rectification.
This MOSFET is built on Infineon’s advanced OptiMOS™ technology platform, which is renowned for its exceptionally low figure-of-merit (RDS(on) × QG). With a maximum on-resistance (RDS(on)) of just 4.0 mΩ at 10 V, this device minimizes conduction losses, allowing for more efficient power transfer and reduced heat generation. This characteristic is crucial for applications operating at high currents, where even marginal losses can significantly impact overall system efficiency and thermal management.
Furthermore, the BSZ040N06LS5ATMA1 boasts an outstanding gate charge (QG) profile. The low gate charge enables faster switching speeds, which directly reduces switching losses—a dominant factor in high-frequency switching power supplies. This combination of low RDS(on) and low QG makes this MOSFET an ideal choice for high-frequency switch-mode power supplies (SMPS), contributing to higher power density designs by allowing for the use of smaller magnetics and capacitors.
The device’s 60V drain-source voltage (VDS) rating provides a robust operating margin for standard 48V industrial and telecom systems, as well as 12V and 24V automotive applications, ensuring reliability under voltage transients. Housed in a space-saving SuperSO8 package, it also offers superior thermal performance, which enhances its ability to dissipate heat effectively, further supporting continuous operation under high-stress conditions.
From server and computing power supplies to battery management systems and industrial automation, the BSZ040N06LS5ATMA1 provides designers with a component that pushes the boundaries of what is possible in modern power electronics, enabling the creation of systems that are not only more efficient but also more compact and reliable.
ICGOODFIND: The Infineon BSZ040N06LS5ATMA1 OptiMOS™ MOSFET is a superior component that dramatically enhances power conversion efficiency through its industry-leading low on-resistance and gate charge, making it a pivotal solution for next-generation high-performance power designs.
Keywords: Power Efficiency, Low RDS(on), OptiMOS™ Technology, Synchronous Rectification, Thermal Performance.
