**HMC540LP3ETR: A High-Performance GaAs pHEMT MMIC Amplifier for 5-20 GHz Applications**

The relentless drive for higher data rates and broader bandwidth in modern wireless systems, from 5G infrastructure to satellite communications and defense electronics, demands high-frequency amplifiers that deliver exceptional performance. The **HMC540LP3ETR** stands out as a premier solution, a **monolithic microwave integrated circuit (MMIC)** amplifier engineered to excel across the **5 GHz to 20 GHz** frequency range.

Fabricated on an advanced **Gallium Arsenide (GaAs) pseudomorphic High Electron Mobility Transistor (pHEMT)** process, this amplifier is the cornerstone of high-frequency signal chains. The pHEMT technology is pivotal, providing the superior electron mobility and low noise figure necessary for operations at microwave and millimeter-wave frequencies. This foundation enables the HMC540LP3ETR to achieve a remarkable combination of **high gain and excellent linearity**, making it an indispensable component for both transmit and receive paths.

A key performance metric for any amplifier is its gain. The HMC540LP3ETR delivers a **high small-signal gain of 18 dB**, which remains exceptionally flat across its entire operational bandwidth. This high and stable gain is crucial for compensating for signal losses in subsequent stages of a system, ensuring strong signal integrity from input to output. Furthermore, the amplifier boasts an outstanding **output power at 1 dB compression (P1dB) of +19 dBm**, highlighting its ability to handle high-power signals without significant distortion. This is complemented by a high **output third-order intercept point (OIP3) of +30 dBm**, which underscores its superior linearity and capability to minimize intermodulation distortion in multi-carrier applications.

The device is designed for ease of integration into a wide array of systems. Housed in a compact, RoHS-compliant 4x4 mm QFN leadless package, it is ideal for space-constrained PCB designs. Its single positive supply voltage requirement, typically **+3V to +5V**, simplifies power management. Additionally, it is internally matched to 50 Ohms at both input and output, significantly reducing the need for external matching components and streamlining the design-in process.

Typical applications for the HMC540LP3ETR are vast and critical to modern connectivity. It is perfectly suited for:

* **5G NR infrastructure** base stations and backhaul links.

* **Military and aerospace** systems including radar, electronic warfare (EW), and communications.

* **Satellite Communication (SATCOM)** downlinks and uplinks.

* **Microwave point-to-point radio** links.

* **Test and measurement equipment** as a reliable gain block.

**ICGOOODFIND:** The HMC540LP3ETR is a high-performance, versatile MMIC amplifier that sets a benchmark for wideband applications. Its robust combination of **high gain, excellent linearity, and strong output power** across the 5-20 GHz band makes it a superior and reliable choice for designers pushing the boundaries of next-generation RF systems.

**Keywords:** GaAs pHEMT, MMIC Amplifier, 5-20 GHz, High Linearity, Output Power