Infineon IPB160N04S2-03: High-Performance 40V OptiMOS Power MOSFET for Automotive and Industrial Applications
The relentless pursuit of higher efficiency, power density, and reliability in power electronics drives continuous innovation in semiconductor technology. Addressing these demanding requirements, Infineon Technologies introduces the IPB160N04S2-03, a benchmark 40V OptiMOS power MOSFET engineered to excel in the most challenging automotive and industrial environments.
This MOSFET is built upon Infineon's advanced OptiMOS technology platform, which is renowned for its exceptional balance of low on-state resistance and high switching performance. The IPB160N04S2-03 stands out with an ultra-low RDS(on) of just 1.6 mΩ at a 10 V gate drive. This remarkably low resistance is a key contributor to minimizing conduction losses, which directly translates into higher system efficiency, reduced heat generation, and the potential for smaller heatsinks or simplified thermal management designs.
Beyond its static performance, the device is optimized for dynamic operation. It features low gate charge (Qg) and excellent figure-of-merit (FOM) characteristics. These traits are critical for high-frequency switching applications, as they significantly reduce switching losses and drive power requirements. This allows designers to increase switching frequencies, which in turn enables the use of smaller passive components like inductors and capacitors, leading to a substantial reduction in the overall size and weight of the power supply or motor drive system.
The IPB160N04S2-03 is housed in a robust PQFN 5x6 (S2) package, offering an excellent power-to-size ratio. This package features an exposed top-side cooling pad that provides superior thermal performance by enabling efficient heat dissipation directly from the silicon to the PCB or an external heatsink. This is paramount for maintaining device reliability under high-stress conditions.
A primary focus of this component is its qualification for the automotive sector. It is AEC-Q101 qualified, ensuring it meets the stringent quality and reliability standards required for use in automotive systems such as electric power steering (EPS), braking systems, DC-DC converters, and motor control modules. Its high robustness and ability to operate reliably over a wide temperature range make it an ideal choice for under-the-hood applications. Furthermore, these same attributes are invaluable for harsh industrial applications, including power tools, robotics, and server power supplies.
ICGOOODFIND: The Infineon IPB160N04S2-03 is a superior 40V power MOSFET that sets a high standard for performance and reliability. Its industry-leading low RDS(on) and optimized switching characteristics make it a powerhouse for maximizing efficiency and power density. The robust S2 package and automotive-grade qualification make it an indispensable component for designers tackling the toughest challenges in next-generation automotive and industrial power systems.
Keywords: OptiMOS Technology, Low RDS(on), AEC-Q101 Qualified, High Efficiency, Power Density.
