Infineon SPW55N80C3FKSA1: 800V N-Channel Power MOSFET for High-Efficiency Switching Applications
The demand for high-efficiency power conversion systems continues to grow across industries such as industrial motor drives, renewable energy inverters, and server power supplies. To meet these demands, power semiconductor devices must offer low losses, high reliability, and robust performance. The Infineon SPW55N80C3FKSA1 is an 800V N-channel power MOSFET designed specifically to excel in high-performance switching applications.
Built on Infineon’s advanced CoolMOS™ C3 superjunction technology, this MOSFET delivers an outstanding balance of low on-state resistance and high switching speed. With an RDS(on) of just 55 mΩ, it significantly reduces conduction losses, leading to improved system efficiency and thermal performance. The 800V drain-source voltage rating provides ample margin for operation in harsh environments, enhancing reliability in applications with voltage spikes or transients.
A key strength of the SPW55N80C3FKSA1 is its optimized gate charge (Qg) and figure of merit (FOM), which contribute to minimized switching losses at high frequencies. This allows designers to increase switching frequencies without compromising efficiency, thereby enabling smaller magnetic components and reduced overall system size and cost. The device also features a low intrinsic capacitance, further supporting fast and smooth switching behavior.
The MOSFET is housed in a TO-247 package, which offers excellent thermal conductivity and mechanical stability. This makes it suitable for high-power applications where efficient heat dissipation is critical. Additionally, the device is designed with high avalanche ruggedness and a body diode with good reverse recovery characteristics, ensuring durable operation under stressful conditions.
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ICGOOODFIND:
The Infineon SPW55N80C3FKSA1 stands out as a high-voltage MOSFET that combines low conduction and switching losses with high reliability. Its advanced CoolMOS™ C3 technology makes it an excellent choice for designers seeking to optimize efficiency and power density in demanding switching applications.
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Keywords:
CoolMOS™ C3 Technology, Low RDS(on), High Switching Efficiency, 800V MOSFET, TO-247 Package
