Infineon IRFR825TRPBF N-Channel Power MOSFET: Datasheet, Application Circuit, and Replacement Guide

The Infineon IRFR825TRPBF is a widely used N-Channel power MOSFET designed with the robust HEXFET® technology, making it a popular choice for a variety of power switching applications. This surface-mount device (SMD) in the D-Pak (TO-252) package offers an excellent balance of efficiency, thermal performance, and cost-effectiveness.

Datasheet Overview and Key Specifications

The datasheet for the IRFR825TRPBF reveals its core electrical characteristics, which are critical for circuit design and component selection. Key specifications include:

Drain-Source Voltage (V_DS): 55V, suitable for a range of low to medium voltage applications.

Continuous Drain Current (I_D): 8.7A at a case temperature of 25°C, providing substantial current handling capability.

On-Resistance (R_DS(on)): A low 0.027Ω (max) at V_GS = 10V. This is a crucial parameter as it directly impacts conduction losses and thermal performance; a lower R_DS(on) means higher efficiency and less heat generation.

Gate Threshold Voltage (V_GS(th)): Typically 2V to 4V, making it compatible with both 3.3V and 5V logic-level drivers, though optimal switching is achieved with a 10V gate drive.

Fast Switching Speed: Essential for PWM (Pulse Width Modulation) applications like motor controls and switch-mode power supplies (SMPS), minimizing switching losses.

Typical Application Circuit

A common application for the IRFR825TRPBF is as a low-side switch in a DC motor control circuit. The fundamental circuit includes:

1. The microcontroller (MCU) generating a PWM signal.

2. A gate driver IC (or a simple bipolar transistor) to rapidly charge and discharge the MOSFET's gate capacitance, ensuring fast switching and preventing excessive heat buildup.

3. The IRFR825TRPBF itself, with its Drain (D) connected to the motor, Source (S) to ground, and Gate (G) to the driver output.

4. A flyback diode placed in reverse bias across the motor's terminals to protect the MOSFET from voltage spikes caused by the inductive kickback when the motor is switched off.

This setup allows the MCU to efficiently control the motor's speed and direction by rapidly switching the MOSFET on and off.

Replacement and Cross-Reference Guide

When the IRFR825TRPBF is unavailable, finding a suitable replacement requires careful comparison of key parameters. Potential substitutes include:

IRF7416TRPBF (Infineon): Offers a similar V_DS (55V) and even lower R_DS(on).

AOD4184 (Alpha & Omega Semiconductor): A comparable part with 55V V_DS and 8.7A I_D.

FDP8870 (ON Semiconductor): Features a higher V_DS (80V) and similar current rating, providing a margin of safety in higher voltage circuits.

When selecting a replacement, it is paramount to verify:

Package compatibility (TO-252/D-Pak).

Voltage (V_DS) and Current (I_D) ratings are equal to or greater than the original.

R_DS(on) is similarly low to maintain efficiency.

Gate charge (Q_g) and threshold voltage (V_GS(th)) to ensure compatibility with the existing driver circuit.

ICGOODFIND: The Infineon IRFR825TRPBF remains a highly reliable and efficient solution for power management tasks. Its strong performance in switching speed and low on-resistance makes it ideal for applications like DC-DC converters, motor drives, and power distribution switches. Always consult the latest datasheet for critical design-in information and thoroughly vet any replacement components to ensure system integrity.

Keywords:

Power MOSFET

HEXFET® Technology

Low On-Resistance

Application Circuit

Replacement Guide